Title :
Strain Evaluation of Plasma-Deposited Silicon Nitride
Author :
Soh, M.T.K. ; Musca, C.A. ; Savvides, N. ; Dell, J.M. ; Faraone, L.
Author_Institution :
Sch. of Electr., Electron. & Comput. Eng., Western Australia Univ., Crawley, WA
Abstract :
Plasma-deposited silicon nitride thin films were deposited at temperatures between 150 and 300 degC. Diagnostic microstructures were fabricated from the thin films using bulk micromachining, and the strain was calculated from optical measurement of post-buckling deflection. The results indicate that the residual strain of the thin films is dominated by the difference in coefficient of thermal expansion between the thin film and substrate, which monotonically increases with decreasing deposition temperature
Keywords :
optical films; plasma deposition; silicon compounds; thermal expansion; 150 to 300 degC; SiN; micromachining; plasma-deposited silicon nitride; post-buckling deflection; residual strain; thermal expansion; Capacitive sensors; Microstructure; Optical films; Plasma diagnostics; Plasma measurements; Plasma temperature; Semiconductor thin films; Silicon; Sputtering; Strain measurement;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
0-7803-8820-8
DOI :
10.1109/COMMAD.2004.1577501
