Title :
A Computational Study on the Growth and Composition of InGaAsP Film in a Horizontal MOCVD Reactor
Author :
Dong-Seok Kim ; Ik-Tae Im ; Woo-Seung Kim
Author_Institution :
Dept. of Mechanical Eng., Hanyang Univ., Seoul
Abstract :
Distribution of growth rate and composition of InGaAsP films along the reactor length direction grown by metalorganic chemical vapor deposition process were studied using computational methods. The influences of process parameters such as pressure, temperature and precursors inlet partial pressures on the growth rate and composition distributions are analyzed. Trimethyl-indium, trimethyl-gallium, tertiary-butylarsine and tertiary-butylphosphine were used as precursors and hydrogen as dilution gas. The reaction model includes 4 gas-phase reactions and 8 surface reactions. Predicted values of the growth rate and composition were compared to the experimental results to validate the numerical model. The influences of heater temperature and operating pressure were analyzed thereafter
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; optical films; semiconductor growth; semiconductor thin films; InGaAsP; InGaAsP film; film composition; growth distribution; heater temperature; horizontal MOCVD reactor; metalorganic chemical vapor deposition; pressure effect; reactor length direction; Chemical vapor deposition; Composite materials; FETs; Gases; Inductors; Kinetic theory; MOCVD; Numerical models; Numerical simulation; Temperature distribution; InGaAsP; metalorganic chemical vapor deposition (MOCVD); numerical simulation;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
0-7803-8820-8
DOI :
10.1109/COMMAD.2004.1577502
