Title :
Constant Capacitance Deep-Level Transient Spectroscopy Study of Bulk Traps and Interface States in P Implanted Si MOS Capacitors
Author :
Villis, B.J. ; McCallum, J.C. ; Lay, M.D.H. ; Gauja, E.
Author_Institution :
Sch. of Phys., Melbourne Univ., Carlton, Vic.
Abstract :
Constant capacitance deep-level transient spectroscopy (CC-DLTS) has been used to study bulk traps and interface states in Si metal-oxide semiconductor (MOS) capacitors with 50 nm thick thermally-grown oxides on an n-type substrate. Both as-grown and P-implanted samples were studied. The P implants were performed at 50 keV to a dose of 1 × 10 10 cm-2. Thermal anneals in the temperature range 200-400°C were performed on implanted and as-grown samples to examine the dynamics of trap annealing
Keywords :
MOS capacitors; annealing; deep level transient spectroscopy; elemental semiconductors; interface states; ion implantation; phosphorus; silicon; 50 keV; 50 nm; P implantation; Si metal-oxide semiconductor capacitors; Si:P; bulk traps; constant capacitance deep-level transient spectroscopy; interface states; thermal annealing; trap annealing; Australia; Capacitance; Interface states; MOS capacitors; Physics; Quantum computing; Rapid thermal annealing; Spectroscopy; Temperature distribution; Voltage;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
0-7803-8820-8
DOI :
10.1109/COMMAD.2004.1577505
