A novel selective SiGe epitaxial growth technology for self-aligned HBTs

Author

Sato, F. ; Hashimoto, T. ; Tashiro, T. ; Tatsumi, T. ; Hiroi, M. ; Niino, T.

Author_Institution

NEC Corp., Kanagawa, Japan

fYear

1992

fDate

2-4 June 1992

Firstpage

62

Lastpage

63

Abstract

A selective epitaxial growth (SEG) technology using Si/sub 2/H/sub 6/+GeH/sub 4/+Cl/sub 2/ under cold-wall ultra-high-vacuum (UHV)/CVD conditions is described. By using this technology, a self-aligned SiGe HBT with selective epitaxial base is realized. This technology also makes possible the void-free selective growth of SiGe/Si epitaxial layers on Si under polysilicon with overhanging structure, as well as on the open region. As for the transistor characteristics, h/sub FE/ of 100 and BV/sub CEO/ of 5.0 V were obtained.<>

Keywords

Ge-Si alloys; heterojunction bipolar transistors; leakage currents; semiconductor growth; semiconductor materials; vapour phase epitaxial growth; Si; Si/sub 2/H/sub 6/-GeH/sub 4/-Cl/sub 2/; SiGe epitaxial growth; SiGe-Si; base resistance; cold wall ultrahigh vacuum CVD; leakage currents; overhanging structure; polysilicon; selective epitaxial base; selective epitaxial growth; self-aligned HBTs; void-free selective growth; Boron; Epitaxial growth; Epitaxial layers; Fluid flow; Germanium silicon alloys; Heterojunction bipolar transistors; National electric code; Silicon germanium; Temperature; Thickness control;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1992. Digest of Technical Papers. 1992 Symposium on

Conference_Location

Seattle, WA, USA

Print_ISBN

0-7803-0698-8

Type

conf

DOI

10.1109/VLSIT.1992.200646

Filename

200646