1.55 μm InGaAsP/InP phase-locked diode laser arrays of high coherent power

Author

Bhattacharya, A. ; Mawst, L.J. ; Botez, D.

Author_Institution

Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA

fYear

1997

fDate

11-15 May 1997

Firstpage

673

Lastpage

675

Abstract

We have obtained 2.5 W peak-pulsed power in a 2.6° wide beam (6.4×diffraction-limit), with 1.2 W in the central lobe, from 40-element, 250 μm aperture, 1.55 μm antiguided laser arrays. The InP-based devices have a compressively-strained InGaAsP double-quantum-well active region and are fabricated by creating a near-resonant antiguided array via a two-step self-aligned MOCVD growth. The width of the central lobe remains constant from 4 to 15×threshold

Keywords

CVD coatings; III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; quantum well lasers; semiconductor laser arrays; 1.55 micron; 2.5 W; InGaAsP-InP; InGaAsP/InP phase-locked diode laser array; beam pattern; coherent power; compressively-strained double-quantum-well; near-resonant antiguided array; peak-pulsed power; two-step self-aligned MOCVD growth; Apertures; Arrayed waveguide gratings; Diode lasers; Indium phosphide; Laser beams; Optical arrays; Optical materials; Phased arrays; Quantum well lasers; Semiconductor laser arrays;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600268

Filename

600268