Title :
AC hot-carrier effect under mechanical stress (MOSFET)
Author :
Hamada, A. ; Takeda, E.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
An AC hot-carrier effect observed under uniaxial mechanical stress is discussed. The effect is due to trap level lowering induced by compressive mechanical stress. In channel hot electron injection, the trap level lowering results in an electron detrapping and a reduction of surface state generation which is not observed for DC stress. These results are significant for nanoscale device design.<>
Keywords :
electron traps; hot carriers; insulated gate field effect transistors; stress effects; surface electron states; AC hot-carrier effect; MOSFET; channel hot electron injection; compressive mechanical stress; electron detrapping; mechanical stress; nanoscale device design; surface state generation; trap level lowering; Capacitive sensors; Degradation; Drain avalanche hot carrier injection; Hot carrier effects; Hot carriers; MOSFET circuits; Reduced instruction set computing; Stress;
Conference_Titel :
VLSI Technology, 1992. Digest of Technical Papers. 1992 Symposium on
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-0698-8
DOI :
10.1109/VLSIT.1992.200667
