Modeling thermal effects on MESFET I-V characteristics

Author

Castagnolo, B. ; Giorgio, A. ; Perri, A.G.

Author_Institution

Dipartimento di Elettrotecnica ed Elettronica, Bari Univ., Italy

Volume

3

fYear

1996

fDate

13-16 May 1996

Firstpage

1298

Abstract

In this paper a new thermal DC I-V empirical model of GaAs MESFETs is proposed. The model is rather simple, suitable for implementation in software for circuit simulations and allows to simulate very well both the internal thermal effects, due to heating of device, for dissipation of electrical power, and the external thermal effects, due to particular environmental temperatures. Moreover it is valid for different MESFET types. The agreement between simulated and measured curves obtained for MESFETs with different gate lengths is excellent, so that accuracy and usefulness of the proposed model are confirmed

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; thermal analysis; DC I-V empirical model; GaAs; GaAs MESFETs; MESFET I-V characteristics; circuit simulation application; external thermal effects; internal thermal effects; thermal effects modelling; Circuit simulation; Electron mobility; Electronic mail; Gallium arsenide; Intrusion detection; Length measurement; MESFETs; Temperature dependence; Temperature sensors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrotechnical Conference, 1996. MELECON '96., 8th Mediterranean

Conference_Location

Bari

Print_ISBN

0-7803-3109-5

Type

conf

DOI

10.1109/MELCON.1996.551184

Filename

551184