Title :
Nonlinear Absorption of Terahertz Radiation in Semiconductor Heterojunctions
Author :
Cao, J.C. ; Qi, M.
Author_Institution :
Shanghai Inst. of Microsystem & Inf. Technol., Chinese Acad. of Sci., Shanghai
Abstract :
By considering multiple photon process and conduction-valence interband impact ionization (II), we have calculated nonlinear free-carrier absorption of terahertz radiation in InAs/AlSb heterojunctions. It is shown that (i) electron-disorder scatterings are important at low to intermediate field, and (ii) most importantly, the high field absorption is dominated by II processes. The calculated results are in good agreement with the available experiments
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; indium compounds; multiphoton processes; nonlinear optics; photoionisation; semiconductor heterojunctions; submillimetre wave spectra; valence bands; InAs-AlSb; InAs/AlSb heterojunctions; conduction-valence interband impact ionization; electron-disorder scatterings; free-carrier absorption; high field absorption; multiple photon process; nonlinear absorption; semiconductor heterojunctions; terahertz radiation; Absorption; Electric fields; Electromagnetic radiation; Electromagnetic scattering; Electrons; Frequency; Heterojunctions; Laboratories; Light scattering; Semiconductor impurities; absorption; heterojunction; terahertz;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
0-7803-8820-8
DOI :
10.1109/COMMAD.2004.1577539
