Nonlinear Absorption of Terahertz Radiation in Semiconductor Heterojunctions

Author

Cao, J.C. ; Qi, M.

Author_Institution

Shanghai Inst. of Microsystem & Inf. Technol., Chinese Acad. of Sci., Shanghai

fYear

2004

fDate

8-10 Dec. 2004

Firstpage

257

Lastpage

260

Abstract

By considering multiple photon process and conduction-valence interband impact ionization (II), we have calculated nonlinear free-carrier absorption of terahertz radiation in InAs/AlSb heterojunctions. It is shown that (i) electron-disorder scatterings are important at low to intermediate field, and (ii) most importantly, the high field absorption is dominated by II processes. The calculated results are in good agreement with the available experiments

Keywords

III-V semiconductors; aluminium compounds; conduction bands; indium compounds; multiphoton processes; nonlinear optics; photoionisation; semiconductor heterojunctions; submillimetre wave spectra; valence bands; InAs-AlSb; InAs/AlSb heterojunctions; conduction-valence interband impact ionization; electron-disorder scatterings; free-carrier absorption; high field absorption; multiple photon process; nonlinear absorption; semiconductor heterojunctions; terahertz radiation; Absorption; Electric fields; Electromagnetic radiation; Electromagnetic scattering; Electrons; Frequency; Heterojunctions; Laboratories; Light scattering; Semiconductor impurities; absorption; heterojunction; terahertz;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577539

Filename

1577539