Title :
Selective Area Epitaxy of InGaAs Quantum Dots for Optoelectronic Device Integration
Author :
Mokkapati, S. ; Lever, P. ; Tan, H.H. ; Jagadish, C. ; McBean, K.E. ; Philips, M.R.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT
Abstract :
We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a range of 100 nm
Keywords :
III-V semiconductors; MOCVD; epitaxial growth; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; photoluminescence; semiconductor quantum dots; InGaAs; InGaAs quantum dots; MOCVD growth; optoelectronic device integration; photoluminescence; selective area epitaxy; Epitaxial growth; Indium gallium arsenide; Laser tuning; Optoelectronic devices; Photonic band gap; Photonic integrated circuits; Quantum dot lasers; Quantum dots; Substrates; US Department of Transportation; Quantum dot; integratedoptoelectronic devices; selective area epitaxy;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
0-7803-8820-8
DOI :
10.1109/COMMAD.2004.1577543
