Guard-Ring Electrode Effects on Crosstalk in Simulated 2D CMOS Compatible Vertical Photodiode Pixel Arrays

Author

Jansz-Dravetzky, P. ; Hinckley, S.

Author_Institution

Centre for Excellence for MicroPhotonic Syst., Edith Cowan Univ., Joondalup, WA

fYear

2004

fDate

8-10 Dec. 2004

Firstpage

299

Lastpage

302

Abstract

In this study, we have simulated the electrical crosstalk in back-illuminated and front-illuminated photodiode arrays as a function of substrate thickness and junction depth for single junction photodiode pixels, with and without guard-ring electrodes. The physical mechanisms responsible for electrical crosstalk suppression are explained using an absorption volume proportion concept. The results obtained show that significant crosstalk suppression can be achieved for back-illuminated thin substrate guarded-pixel arrays

Keywords

CMOS image sensors; crosstalk; electrodes; integrated optoelectronics; photodiodes; absorption volume proportion; back-illuminated photodiode arrays; crosstalk suppression; electrical crosstalk; front-illuminated photodiode arrays; guard-ring electrode effects; guarded-pixel arrays; junction depth; simulated 2D CMOS; single junction photodiode pixels; substrate thickness; vertical photodiode pixel arrays; Absorption; Cathodes; Crosstalk; Doping; Electrodes; Image resolution; Lighting; Photodiodes; Pixel; Thyristors; CMOS; Crosstalk; guard-ring electrode; pixel array; simulation; single-junction; vertical photodiode;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577550

Filename

1577550