Title :
Nanoindentation of Si Nanocrystals in SiO2
Author :
Pok, W. ; Bradby, J. ; Elliman, R.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT
Abstract :
Nanoindentation is used to investigate the effects of mechanical deformation on systems of silicon nanocrystals (Si-nc) embedded in SiO 2. The process is found to introduce non-radiative defects to the crystals which quench their luminescence in the localised region of the indent. The transformation to high-pressure metastable phases in the underlying Si substrate is characterised by Raman spectroscopy and transmission electron microscopy, with the critical load found to be between 50 and 100 mN for a spherical indenter and between 25 and 50 mN for a Berkovich indenter. The results are consistent with computer simulations of the indentation process on identical systems
Keywords :
Raman spectra; deformation; indentation; nanostructured materials; photoluminescence; radiation quenching; silicon; silicon compounds; solid-state phase transformations; transmission electron microscopy; Berkovich indenter; Raman spectroscopy; Si; Si nanocrystals; Si substrate; SiO2:Si; critical load; high-pressure phases; luminescence quenching; mechanical deformation; metastable phases; nanoindentation; nonradiative defects; spherical indenter; transmission electron microscopy; Area measurement; Crystals; Instruments; Luminescence; Metastasis; Nanocrystals; Scanning electron microscopy; Silicon; Spectroscopy; Transmission electron microscopy;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
0-7803-8820-8
DOI :
10.1109/COMMAD.2004.1577559
