Title :
Self-Assembled Lanthanum Gallate Microdots and Holes on Si
Author :
Singh, A. ; Jakovidis, G. ; Sellar, J.R.
Abstract :
Doped lanthanum gallate thin films deposited on Si(111) substrates by radio frequency (RF)-sputtering reveal the presence of self-assembled islands that are of the order of microns in size. These microdots are accompanied by slightly larger holes which form part of the same overall arrangement as the microdots. We present the results of our scanning electron microscope (SEM) and energy dispersive spectrometry (EDS) investigations of these microdots. The formation of the microdots is compared to that of quantum dots (QDs) on semiconductor surfaces, and a model is proposed for the formation process of the microdots and the holes by analogy with the nucleation and growth of islands at the nano-scale
Keywords :
electrolytes; gallium compounds; island structure; lanthanum compounds; scanning electron microscopy; self-assembly; solid oxide fuel cells; sputter deposition; strontium compounds; thin films; Si; Si(111) substrates; doped thin films; energy dispersive spectrometry; intermediate-temperature electrolytes; lanthanum gallate holes; lanthanum gallate microdots; lanthanum gallate thin films; nanoscale growth; nucleation; radiofrequency sputtering; scanning electron microscope; self-assembled islands; self-assembly; solid oxide fuel cells; Dispersion; Instruments; Lanthanum; Quantum dots; Radio frequency; Scanning electron microscopy; Semiconductor thin films; Spectroscopy; Sputtering; Substrates; Lanthanum gallate thin films; Stranski-Krastanov mechanism; intermediate-temperature electrolytes; island formation; microdots; solid oxide fuel cells(SOFC);
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
0-7803-8820-8
DOI :
10.1109/COMMAD.2004.1577564
