DocumentCode
3043280
Title
Carrier Transport Affected by X-L Transfer in a GaAs/AlAs Superlattice
Author
Shioji, T. ; Nougi, J. ; Nashima, S. ; Hosoda, M.
Author_Institution
Dept. of Appl. Phys., Osaka City Univ.
fYear
2004
fDate
8-10 Dec. 2004
Firstpage
361
Lastpage
364
Abstract
We demonstrate a novel carrier transport mechanism in semiconductor superlattices. Experimental results show that the higher-subband states positioned above the Γ ground state in a quantum well (QW), i.e., X in the barrier and L in the QW subband states, greatly influence the electron transport in some superlattices under an electric field
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; ground states; semiconductor quantum wells; semiconductor superlattices; GaAs-AlAs; GaAs/AlAs superlattice; Gamma ground state; X-L transfer; carrier transport; electron transport; quantum well; semiconductor superlattices; subband states; Electrodes; Electrons; Gallium arsenide; Optical pulse generation; Oscilloscopes; P-i-n diodes; Photoconductivity; Semiconductor superlattices; Stationary state; Voltage; GaAs/AlAs superlattice; X-Ltransfer; carrier transport; semiconductor superlattice;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Conference_Location
Brisbane, Qld.
Print_ISBN
0-7803-8820-8
Type
conf
DOI
10.1109/COMMAD.2004.1577565
Filename
1577565
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