Towards Quantifying the Bandgap Energy of Indium Nitride

Author

Anderson, P.A. ; Kendrick, C.E. ; Kinsey, R.J. ; Williams, L. ; Reeves, R.J. ; Durbin, S.M.

Author_Institution

Dept. of Electr. & Comput. Eng., Canterbury Univ., Christchurch

fYear

2004

fDate

8-10 Dec. 2004

Firstpage

373

Lastpage

376

Abstract

InN grown on sapphire and silica glass, and InGaN alloys grown on silica glass have been studied by TEM, optical absorption, photoluminescence (PL) and photoconductivity (PC). The peak PL location from InGaN films was found to reduce steadily in energy with increasing indium mole fraction from 3.4 eV to 0.7 eV. The 0.7 eV PL feature was observed despite n-type carrier concentrations as high as 10²⁰ cm^-3. PL and PC studies on InN grown on sapphire showed a PC onset near 0.73 eV and strong PL signal around 0.65 eV. TEM could find no evidence for indium clustering within the InN films. These observations strongly suggest that the 0.7 eV feature is related to band to band transitions and not a deep level state

Keywords

III-V semiconductors; carrier density; energy gap; indium compounds; photoconductivity; photoluminescence; semiconductor thin films; transmission electron microscopy; 0.7 to 3.4 eV; Al₂O₃; InGaN; InGaN alloys; InGaN films; InN; SiO₂; TEM; band to band transitions; bandgap energy; carrier concentrations; indium mole fraction; optical absorption; photoconductivity; photoluminescence; sapphire; silica glass; Absorption; Glass; Indium; Molecular beam epitaxial growth; Nitrogen; Optical films; Photonic band gap; Plasma measurements; Pollution measurement; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577568

Filename

1577568