Defect Structure Modification in Undoped and In-doped CdTe by Cd-Rich Annealing

Author

Belas, E. ; Grill, R. ; Moravec, P. ; Horodysky, P. ; Hlidek, P. ; Franc, J. ; Hoschl, P.

Author_Institution

Inst. of Phys., Charles Univ., Prague

fYear

2004

fDate

8-10 Dec. 2004

Firstpage

377

Lastpage

380

Abstract

The effect of Cd-rich annealing at 500°C and 600°C on electrical and optical properties of undoped and high-resistivity In-doped CdTe was investigated by the Hall effect, photoluminescence and infrared transmittance measurements in the temperature interval 4.2-300 K. Formation of a conductive r-type skin layer was observed in both materials and the In_Cd donor is found to be responsible for the n-type behaviour. Purification of the skin layer from fast diffusing elements was observed by photoluminescence, where a reduction of the intensity of the emission lines related to excitons bound to acceptors was detected

Keywords

Hall effect; II-VI semiconductors; annealing; cadmium compounds; crystal defects; excitons; infrared spectra; photoluminescence; 4.2 to 300 K; 500 degC; 600 degC; Cd-rich annealing; CdTe; CdTe:In; Hall effect; In-doped CdTe; In_Cd donor; conductive skin layer; defect structure modification; emission lines; excitons; fast diffusing elements; infrared transmittance; intensity reduction; n-type skin layer; photoluminescence; purification; resistivity; undoped CdTe; Annealing; Conducting materials; Conductivity measurement; Electric variables measurement; Hall effect; Optical materials; Photoluminescence; Purification; Skin; Temperature measurement; Annealing; CdTe; Diffusion; component;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577569

Filename

1577569