DocumentCode :
3043449
Title :
Research of etching a novel MEMS gyroscope sensing pendulum
Author :
Liu, Yu ; Sun, Baisheng ; Zhang, Fuxue ; Zhang, Wei
Author_Institution :
Sch. of Autom., Beijing Univ. of Posts & Telecommun., Beijing, China
fYear :
2010
fDate :
20-23 June 2010
Firstpage :
1516
Lastpage :
1519
Abstract :
A novel MEMS gyroscope sensing pendulum was etched with KOH by isothermal magnetic stirrer, and the etching rate relation with temperature and concentration was investigated in the mask of SiO2. The results reveal that a rate of etching Si(100), Si(100) to SiO2 and Si(100) to Si(111) is 4.0 μm/min, 550:1 and 90:1 respectively, a uniformity etching surface and ideal etching rate are obtained for a concentration of 30%KOH at 110°C, meet the production of MEMS gyroscope requirements.
Keywords :
etching; gyroscopes; micromechanical devices; pendulums; KOH; MEMS gyroscope sensing pendulum; ideal etching rate; isothermal magnetic stirrer; uniformity etching surface; Anisotropic magnetoresistance; Gyroscopes; Lithography; Magnetic anisotropy; Micromechanical devices; Oxidation; Perpendicular magnetic anisotropy; Silicon; Structural beams; Wet etching; KOH; MEMS; Magnetic; Wet Etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Information and Automation (ICIA), 2010 IEEE International Conference on
Conference_Location :
Harbin
Print_ISBN :
978-1-4244-5701-4
Type :
conf
DOI :
10.1109/ICINFA.2010.5512026
Filename :
5512026
Link To Document :
بازگشت