65NM sub-threshold 11T-SRAM for ultra low voltage applications

In this paper a new ultra low power SRAM cell is proposed. In the proposed SRAM topology, additional circuitry has been added to a standard 6T-SRAM cell to improve the static noise margin (SNM) and the performance. Foundry models for a 65 nm standard CMOS process were used for obtaining reliable simulated results. The circuit was simulated for supply voltages from 0.2 V to 0.35 V verifying the robustness of the proposed circuit for different supply voltages. The simulations show a significant improvement in SNM and a 4X improvement in read speed still maintaining a satisfactory write noise margin compared with the 6T-SRAM cell. The proposed circuit has an area overhead between 22%-28% compared with the 6T-SRAM.