Hard drive of high power GTOs: better switching capability obtained through improved gate-units

Author

Gruening, H.E. ; Zuckerberger, A.

Author_Institution

R&D Drives & Power Electron., ABB Ind. AG, Turgi, Switzerland

Volume

3

fYear

1996

fDate

6-10 Oct 1996

Firstpage

1474

Abstract

The paper presents the dynamic behavior of a standard high power GTO (CSG 3003-45) during turn-on and off switching transients under hard drive conditions. The high power switching device and its gate-unit were modeled and simulated in Spice and ABBPisces (2D device and circuit simulator) and their performances were predicted. A gate-unit capable to handle up to |dI_G/dt|=5 kA/μs was realized and tremendous betterment of device original specifications (as per data-sheet supplied from the producer) were observed during measurements. Very good agreement between simulation and laboratory findings were notified during turn-on and turn-off transients. This is a good indication of homogeneous operation of all 2000 parallel cells of the segmented GTO

Keywords

SPICE; circuit analysis computing; power semiconductor switches; power system transients; semiconductor device models; semiconductor device testing; software packages; thyristors; ABBPisces; Spice; computer simulation; device specifications; gate-drive units; hard switching capability; homogeneous operation; measurements; power GTOs; turn-off switching transients; turn-on switching transients; Anodes; Capacitors; Circuit simulation; Delay; Energy management; Predictive models; Research and development; Research and development management; Switching circuits; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1996. Thirty-First IAS Annual Meeting, IAS '96., Conference Record of the 1996 IEEE

Conference_Location

San Diego, CA

ISSN

0197-2618

Print_ISBN

0-7803-3544-9

Type

conf

DOI

10.1109/IAS.1996.559263

Filename

559263