Title :
Hard drive of high power GTOs: better switching capability obtained through improved gate-units
Author :
Gruening, H.E. ; Zuckerberger, A.
Author_Institution :
R&D Drives & Power Electron., ABB Ind. AG, Turgi, Switzerland
Abstract :
The paper presents the dynamic behavior of a standard high power GTO (CSG 3003-45) during turn-on and off switching transients under hard drive conditions. The high power switching device and its gate-unit were modeled and simulated in Spice and ABBPisces (2D device and circuit simulator) and their performances were predicted. A gate-unit capable to handle up to |dIG/dt|=5 kA/μs was realized and tremendous betterment of device original specifications (as per data-sheet supplied from the producer) were observed during measurements. Very good agreement between simulation and laboratory findings were notified during turn-on and turn-off transients. This is a good indication of homogeneous operation of all 2000 parallel cells of the segmented GTO
Keywords :
SPICE; circuit analysis computing; power semiconductor switches; power system transients; semiconductor device models; semiconductor device testing; software packages; thyristors; ABBPisces; Spice; computer simulation; device specifications; gate-drive units; hard switching capability; homogeneous operation; measurements; power GTOs; turn-off switching transients; turn-on switching transients; Anodes; Capacitors; Circuit simulation; Delay; Energy management; Predictive models; Research and development; Research and development management; Switching circuits; Thyristors;
Conference_Titel :
Industry Applications Conference, 1996. Thirty-First IAS Annual Meeting, IAS '96., Conference Record of the 1996 IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-3544-9
DOI :
10.1109/IAS.1996.559263
