DocumentCode

3044009

Title

MOVPE Growth Chamber Pressure Influence In Si Doping Of InP And InGaAs

Author

Narayanan, A. ; Nguyen, C. ; Hooper, W. ; Rench, D.

Author_Institution

Hughes Research Laboratories

fYear

1994

fDate

6-13 Jul 1994

Keywords

Doping; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Laboratories; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:

Print_ISBN

0-7803-1752-1

Type

conf

DOI

10.1109/LEOSST.1994.700535

Filename

700535