Title :
A Ka-band MMIC Doherty Power Amplifier using GaAs pHEMT technology
Author :
Wang, Xiaoying ; Peng, Yangyang ; Ma, Fangyue ; Sui, Wenquan
Author_Institution :
Zhejiang-California Nanosyst. Inst., Zhejiang Univ., Hangzhou, China
Abstract :
A fully integrated Ka-band Monolithic microwave integrated circuit (MMIC) Doherty Power Amplifier (PA) is designed and demonstrated in this paper. The proposed Doherty PA maily consists of a Lange coupler, carrier amplifier branch, peaking amplifier branch and impedance transformer network. offset lines are introduced in each branch to overcome the inherent defects of conventional Doherty PA. Electromagnetic (EM) simulated results show the proposed Doherty PA obtains a small signal gain over 5.5dB from 31GHz to 35GHz with a compact die size of 2mm×1.7mm. Power added efficiency (PAE) is over 19.8% at 6dB back-off with saturated output power over 26dBm.
Keywords :
MMIC power amplifiers; gallium arsenide; high electron mobility transistors; Ka-band MMIC Doherty power amplifier; Lange coupler; amplifier branch; carrier amplifier branch; compact die size; frequency 31 GHz to 35 GHz; impedance transformer network; monolithic microwave integrated circuit; pHEMT technology; power added efficiency; Couplers; Impedance; Linearity; MMICs; Microwave communication; Power generation; Wireless communication;
Conference_Titel :
Integrated Circuits (ISIC), 2011 13th International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-61284-863-1
DOI :
10.1109/ISICir.2011.6131887
