Title :
A low power sub-1 V CMOS voltage reference
Author :
Somvanshi, Sameer ; Kasavajjala, Santhosh
Author_Institution :
EEE Dept., BITS-Pilani, Rajasthan
Abstract :
This work describes the circuit which generates a stable voltage of 466.5 mV for 1.8 V power supply in 0.18 mum technology. Circuit uses MOSFETs in linear region and in subthreshold region to generate PTAT and CTAT respectively intended to replace resistor and BJT. The temperature coefficient of circuit is 28.4 ppm/degC in the range of -20 to +120degC. The power supply rejection is measured as -30 dB at 8 KHz. Low power consumption of 3.98 muW is an important attribute of this circuit.
Keywords :
CMOS integrated circuits; low-power electronics; reference circuits; CMOS circuits; CTAT; MOSFET circuit; PTAT; bandgap reference circuit; circuit layout; frequency 8 kHz; low power CMOS voltage reference; power 3.98 muW; size 0.18 mum; temperature -20 C to 120 C; temperature coefficient; voltage 1.8 V; voltage 466.5 mV; CMOS technology; Circuits; Energy consumption; MOSFETs; Power generation; Power measurement; Power supplies; Resistors; Temperature distribution; Voltage;
Conference_Titel :
SOC Conference, 2008 IEEE International
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-2596-9
Electronic_ISBN :
978-1-4244-2597-6
DOI :
10.1109/SOCC.2008.4641526
