3044323

Kinetics Of Islands And Monolayer Steps In Molecular Beam Epitaxy Revealed By In -situ Scanning Electron Microscopy

Inoue, N.

NTT LSI Laboratories

1994

6-13 Jul 1994

Annealing; Atomic layer deposition; Buffer layers; Electron beams; Gallium arsenide; Kinetic theory; Molecular beam epitaxial growth; Rough surfaces; Scanning electron microscopy; Surface roughness;

English

ieee

Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:

0-7803-1752-1

conf

10.1109/LEOSST.1994.700537

700537