3044408

Enhanced Dry-etched Mirror Process For High-speed And Monolithically Integrated GaAs-based MQW Lasers

Ralston, J.D. ; Eisele, K. ; Sah, R.E. ; Bürkner, S. ; Fleissner, J. ; Bender, K. ; Larkins, E.C. ; Weisser, S.

Fraunhofer-Institut fur Angewandte Festkorperphysik

1994

6-13 Jul 1994

Chemical lasers; Electrons; Etching; Gallium arsenide; Gas lasers; Ion beams; Mirrors; Plasma temperature; Quantum well devices; Surface morphology;

English

ieee

Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:

0-7803-1752-1

conf

10.1109/LEOSST.1994.700539

700539