Enhanced Dry-etched Mirror Process For High-speed And Monolithically Integrated GaAs-based MQW Lasers

Author

Ralston, J.D. ; Eisele, K. ; Sah, R.E. ; Bürkner, S. ; Fleissner, J. ; Bender, K. ; Larkins, E.C. ; Weisser, S.

Author_Institution

Fraunhofer-Institut fur Angewandte Festkorperphysik

fYear

1994

fDate

6-13 Jul 1994

Keywords

Chemical lasers; Electrons; Etching; Gallium arsenide; Gas lasers; Ion beams; Mirrors; Plasma temperature; Quantum well devices; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:

Print_ISBN

0-7803-1752-1

Type

DOI

10.1109/LEOSST.1994.700539

Filename

700539

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