DocumentCode
3044512
Title
Deposition Condition Dependence Of Silicon Nitride Used As A Diffusion Barrier During MBE Growth Of III-Vs On Silicon VLSI Electronics
Author
Walker, J.A. ; Goossen, K.W. ; Cunningham, J.E. ; Ian, W.Y.
Author_Institution
AT&T Bell Laboratories
fYear
1994
fDate
6-13 Jul 1994
Keywords
Adhesives; Dielectrics; Gallium arsenide; Glass; Hafnium; Molecular beam epitaxial growth; Plasma temperature; Silicon; Surface cleaning; Surface resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:
Print_ISBN
0-7803-1752-1
Type
conf
DOI
10.1109/LEOSST.1994.700542
Filename
700542
Link To Document