3044512

Deposition Condition Dependence Of Silicon Nitride Used As A Diffusion Barrier During MBE Growth Of III-Vs On Silicon VLSI Electronics

Walker, J.A. ; Goossen, K.W. ; Cunningham, J.E. ; Ian, W.Y.

AT&T Bell Laboratories

1994

6-13 Jul 1994

Adhesives; Dielectrics; Gallium arsenide; Glass; Hafnium; Molecular beam epitaxial growth; Plasma temperature; Silicon; Surface cleaning; Surface resistance;

English

ieee

Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:

0-7803-1752-1

conf

10.1109/LEOSST.1994.700542

700542