Title :
A wideband 0.6dB insertion loss +20.5dBm P1dB CMOS T/R switch
Author :
Chen, Xuesong ; Raja, M. Kumarasamy
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
Abstract :
This paper provides a detailed analysis of performance limitations in RF CMOS T/R switches, and proposes a novel method to improve the insertion loss and power handling capability by dynamically biasing the body and the gate of the switch transistors to make the device operating in linear region under large signals. The concept is implemented with circuits only and no inductor is used. A prototype was designed and implemented in standard 0.18-μm CMOS technology. The experimental results show 0.6dB insertion loss at 2.4GHz, 20.5dBm P1dB for the transmitter path of the T/R Switch with a single 1.8V control voltage. The die area excluding IO pads is 0.14mm by 0.12mm. The performance meets the requirements of most mobile wireless communication systems.
Keywords :
CMOS integrated circuits; microwave switches; radio transmitters; radiofrequency integrated circuits; CMOS technology; RF CMOS T/R switch; frequency 2.4 GHz; linear region; loss 0.6 dB; mobile wireless communication systems; power handling capability; size 0.12 mm; size 0.14 mm; size 0.18 mum; switch transistors; transmitter path; voltage 1.8 V; CMOS integrated circuits; Insertion loss; Radio frequency; Receivers; Switches; Switching circuits; Transmitters; CMOS; T/R switch; low insertion loss; wideband;
Conference_Titel :
Integrated Circuits (ISIC), 2011 13th International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-61284-863-1
DOI :
10.1109/ISICir.2011.6131908
