DocumentCode
3044560
Title
Substrate Misorientation Effect On Cubic And Hexagonal GaN Grown On GaAs By Molecular Beam Epitaxy Using RF-radical Nitrogen Source
Author
Hoshi, Hiroyuki ; Kikuchi, Akihiko ; Kishino, Katsumi
Author_Institution
Sophia University
fYear
1994
fDate
6-13 Jul 1994
Keywords
Cleaning; Crystalline materials; Crystals; Gallium arsenide; Gallium nitride; Molecular beam epitaxial growth; Nitrogen; Photoluminescence; Substrates; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:
Print_ISBN
0-7803-1752-1
Type
conf
DOI
10.1109/LEOSST.1994.700545
Filename
700545
Link To Document