Title :
GSM/EDGE Power Amplifier module with improved low-power efficiency
Author :
Li, Jinbo ; Mo, Tingting ; Xu, Feng
Author_Institution :
Center for Analog/RF IC(CARFIC), Shanghai Jiao Tong Univ., Shanghai, China
Abstract :
A dual mode 900MHz GSM/EDGE Power Amplifier module (PAM) is designed using IBM 0.35μm SiGe BiCMOS technology. Bypass of the third stage is adopted for EDGE mode, leaving the final stage to work in Class E for high efficiency of GSM mode. Additionally, automatic level control (ALC) is employed to improve the power added efficiency (PAE) of low-power EDGE, along with the harmonic termination technique used in the inter-stage matching network for linearity requirement of EDGE. Simulation shows that the proposed PAM exhibits 29.5% PAE and -36.3dBc ACPR at 27dBm output for EDGE mode and 49% PAE at 35dBm output for GSM mode. After ALC, the average PAE of EDGE is boosted from 2.0% to 3.4%, which is 70% improved.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF power amplifiers; cellular radio; ALC; GSM/EDGE power amplifier module; IBM BiCMOS technology; SiGe; automatic level control; class E power amplifier; frequency 900 MHz; interstage matching network; linearity requirement; size 0.35 mum; Detectors; GSM; Harmonic analysis; Image edge detection; Linearity; Power amplifiers; Silicon germanium; SiGe BiCMOS; automatic level control; power amplifier module; stage-bypass;
Conference_Titel :
Integrated Circuits (ISIC), 2011 13th International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-61284-863-1
DOI :
10.1109/ISICir.2011.6131922
