Piezoelectric Nanoswitch

Author

Judy, D.C. ; Pulskamp, J.S. ; Polcawich, R.G. ; Currano, L.

Author_Institution

US Army Res. Lab., Adelphi, MD

fYear

2009

fDate

25-29 Jan. 2009

Firstpage

591

Lastpage

594

Abstract

This paper details the design, fabrication, and measurement of a nano-scale mechanical switch. The switch uses lead zirconate titanate (PZT) actuators fabricated on silicon wafers and is intended to realize very low leakage complimentary mechanical logic elements. The switches were fabricated using an eleven step electron beam process using a novel dual electron beam photo resist technique to create gold air bridges. A normally closed switch was successfully demonstrated with switching times as fast as 17 ns, operating as low as 6 volt actuation.

Keywords

electron resists; lead compounds; nanoelectromechanical devices; nanofabrication; photoresists; piezoelectric actuators; silicon; zirconium compounds; PZT; PZT actuator; Si; dual electron beam photo resist technique; electron beam process; gold air bridge; lead zirconate titanate; low leakage complimentary mechanical logic element; nanoscale mechanical switch fabrication; piezoelectric nanoswitch design; silicon wafer; Actuators; Electron beams; Fabrication; Gold; Logic; Mechanical variables measurement; Resists; Silicon; Switches; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on

Conference_Location

Sorrento

ISSN

1084-6999

Print_ISBN

978-1-4244-2977-6

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2009.4805451

Filename

4805451