Title :
Piezoelectric Nanoswitch
Author :
Judy, D.C. ; Pulskamp, J.S. ; Polcawich, R.G. ; Currano, L.
Author_Institution :
US Army Res. Lab., Adelphi, MD
Abstract :
This paper details the design, fabrication, and measurement of a nano-scale mechanical switch. The switch uses lead zirconate titanate (PZT) actuators fabricated on silicon wafers and is intended to realize very low leakage complimentary mechanical logic elements. The switches were fabricated using an eleven step electron beam process using a novel dual electron beam photo resist technique to create gold air bridges. A normally closed switch was successfully demonstrated with switching times as fast as 17 ns, operating as low as 6 volt actuation.
Keywords :
electron resists; lead compounds; nanoelectromechanical devices; nanofabrication; photoresists; piezoelectric actuators; silicon; zirconium compounds; PZT; PZT actuator; Si; dual electron beam photo resist technique; electron beam process; gold air bridge; lead zirconate titanate; low leakage complimentary mechanical logic element; nanoscale mechanical switch fabrication; piezoelectric nanoswitch design; silicon wafer; Actuators; Electron beams; Fabrication; Gold; Logic; Mechanical variables measurement; Resists; Silicon; Switches; Titanium compounds;
Conference_Titel :
Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-2977-6
Electronic_ISBN :
1084-6999
DOI :
10.1109/MEMSYS.2009.4805451
