Title :
Compare noise characteristic of DC-HEMT and HEMT
Author :
Sadeghi, Siavash ; Vadizadeh, Mehdi ; Faez, Rahim
Author_Institution :
Dept. of Electr. Eng., Islamic Azad Univ., Tehran, Iran
Abstract :
We compare noise characteristics of Al0.3Ga0.7N /GaN/ Al0.06Ga0.94N/GaN DC-HEMT and Al0.3Ga0.7N /GaN HEMT. The DC-HEMT exhibits high gain and high current and low noise. The noise characteristics are calculated as a function of gate voltage as well as drain voltage. The noise curve versus gate voltage also shows three regions. And also the noise curve versus drain voltage shows two regions. The first region is related to the triode region of the transistor where the noise decreases with increase of the drain voltage. The second region is related to the saturation region of the transistor where the noise is almost constant.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device noise; wide band gap semiconductors; Al0.3Ga0.7N-GaN-Al0.06Ga0.94N-GaN; DC-HEMT; HEMT; gate voltage; noise characteristic; noise curve; transistor saturation region; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Microwave devices; Noise; Noise figure;
Conference_Titel :
Electrical Engineering (ICEE), 2013 21st Iranian Conference on
Conference_Location :
Mashhad
DOI :
10.1109/IranianCEE.2013.6599546
