DocumentCode
3045708
Title
Optical quenching of lock-on currents in GaAs:Si:Cu switches
Author
Roush, R. ; Mazzola, M. ; Schoenbach, K. ; Lakdawala, V.
Author_Institution
Old Dominion Univ., Norfolk, VA, USA
fYear
1990
fDate
26-28 Jun 1990
Firstpage
339
Lastpage
342
Abstract
Infrared quenching of lock-on currents has been demonstrated in a photoconductive GaAs:Si:Cu switch. After quenching of the persistent photocurrent, the current recovers in about 25 ns to a constant value. The persistent photo and dark currents are considered to be due to double injection of carriers through the ohmic contacts of the photoconductive switch. It is noted that optical quenching of lock-on current offers the possibility of using GaAs:Si:Cu switches in high-rep-rate inductive energy storage systems
Keywords
III-V semiconductors; copper; gallium arsenide; photoconducting devices; radiation quenching; semiconductor switches; silicon; GaAs:Si,Cu photoconductive switches; IR quenching; carrier injection; dark currents; lock-on currents; ohmic contacts; optical quenching; persistent photocurrent; semiconductor; Annealing; Charge carrier processes; Conductivity; Contacts; Copper; Gallium arsenide; Geometry; Optical switches; Photoconductivity; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Modulator Symposium, 1990., IEEE Conference Record of the 1990 Nineteenth
Conference_Location
San Diego, CA
Type
conf
DOI
10.1109/MODSYM.1990.200982
Filename
200982
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