Title :
Optical quenching of lock-on currents in GaAs:Si:Cu switches
Author :
Roush, R. ; Mazzola, M. ; Schoenbach, K. ; Lakdawala, V.
Author_Institution :
Old Dominion Univ., Norfolk, VA, USA
Abstract :
Infrared quenching of lock-on currents has been demonstrated in a photoconductive GaAs:Si:Cu switch. After quenching of the persistent photocurrent, the current recovers in about 25 ns to a constant value. The persistent photo and dark currents are considered to be due to double injection of carriers through the ohmic contacts of the photoconductive switch. It is noted that optical quenching of lock-on current offers the possibility of using GaAs:Si:Cu switches in high-rep-rate inductive energy storage systems
Keywords :
III-V semiconductors; copper; gallium arsenide; photoconducting devices; radiation quenching; semiconductor switches; silicon; GaAs:Si,Cu photoconductive switches; IR quenching; carrier injection; dark currents; lock-on currents; ohmic contacts; optical quenching; persistent photocurrent; semiconductor; Annealing; Charge carrier processes; Conductivity; Contacts; Copper; Gallium arsenide; Geometry; Optical switches; Photoconductivity; Silicon;
Conference_Titel :
Power Modulator Symposium, 1990., IEEE Conference Record of the 1990 Nineteenth
Conference_Location :
San Diego, CA
DOI :
10.1109/MODSYM.1990.200982
