DocumentCode :
3045718
Title :
Temperature behavior mismatch of halo implanted short channel transistors and its influence on PUF circuits
Author :
Hofer, Maximilian ; Böhm, Christoph ; Pribyl, Wolfgang
Author_Institution :
Inst. for Electron., Graz Univ. of Technol., Graz, Austria
fYear :
2011
fDate :
12-14 Dec. 2011
Firstpage :
352
Lastpage :
355
Abstract :
So-called physical unclonable functions (PUFs) are circuits that generate IDs or keys from manufacturing variations. Since the estimation of the error rates of PUFs should already be done during the design phase, Monte Carlo circuit simulations should provide realistic results. Unfortunately, it turns out that the temperature behavior is not covered well in the Monte Carlo parameters if halo implanted transistors are used. In this paper we analyze the influence of halo and substrate doping concentration variations on the temperature behavior of minimum size transistors and suggest an adaptation of the Monte Carlo parameters with respect to this problem. Since temperature depending behavior of transistors is a general issue, the proposed approach is not restricted to PUF circuits.
Keywords :
Monte Carlo methods; circuit simulation; field effect transistors; ion implantation; semiconductor device models; semiconductor doping; Monte Carlo circuit simulations; PUF circuits; halo implanted short channel transistors; physical unclonable functions; substrate doping concentration variations; temperature behavior mismatch; Doping; Error analysis; Implants; Integrated circuit modeling; Monte Carlo methods; Temperature measurement; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuits (ISIC), 2011 13th International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-61284-863-1
Type :
conf
DOI :
10.1109/ISICir.2011.6131969
Filename :
6131969
Link To Document :
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