• DocumentCode
    3045807
  • Title

    A high voltage bulk MESFET using in-situ junctions

  • Author

    Levinson, M. ; Rossoni, P. ; Byszewski, W. ; Ditchek, B.

  • Author_Institution
    GTE Lab. Inc., Waltham, MA, USA
  • fYear
    1990
  • fDate
    26-28 Jun 1990
  • Firstpage
    347
  • Lastpage
    351
  • Abstract
    A bulk MESFET based on semiconductor-metal eutectic (SME) composite materials is described, and its application to pulsed power switching is discussed. Numerical modeling of these transistors has shown that is should be possible to design them to hold off very large voltages, and device and materials parameters which should optimize their performance have been identified. Experimental Si-TaSi2 SME devices have shown breakdown voltages more than three times that expected for conventional semiconductor junctions of the same carrier concentration, in agreement with the model
  • Keywords
    Schottky gate field effect transistors; composite materials; pulsed power technology; semiconductor device models; switching; breakdown voltages; bulk MESFET; in-situ junctions; pulsed power switching; semiconductor-metal eutectic composite materials; Breakdown voltage; Composite materials; Crystalline materials; Geometry; Laboratories; MESFETs; Numerical models; Semiconductor materials; Solid modeling; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Modulator Symposium, 1990., IEEE Conference Record of the 1990 Nineteenth
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/MODSYM.1990.200989
  • Filename
    200989
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3045807