Title :
A high voltage bulk MESFET using in-situ junctions
Author :
Levinson, M. ; Rossoni, P. ; Byszewski, W. ; Ditchek, B.
Author_Institution :
GTE Lab. Inc., Waltham, MA, USA
Abstract :
A bulk MESFET based on semiconductor-metal eutectic (SME) composite materials is described, and its application to pulsed power switching is discussed. Numerical modeling of these transistors has shown that is should be possible to design them to hold off very large voltages, and device and materials parameters which should optimize their performance have been identified. Experimental Si-TaSi2 SME devices have shown breakdown voltages more than three times that expected for conventional semiconductor junctions of the same carrier concentration, in agreement with the model
Keywords :
Schottky gate field effect transistors; composite materials; pulsed power technology; semiconductor device models; switching; breakdown voltages; bulk MESFET; in-situ junctions; pulsed power switching; semiconductor-metal eutectic composite materials; Breakdown voltage; Composite materials; Crystalline materials; Geometry; Laboratories; MESFETs; Numerical models; Semiconductor materials; Solid modeling; Switches;
Conference_Titel :
Power Modulator Symposium, 1990., IEEE Conference Record of the 1990 Nineteenth
Conference_Location :
San Diego, CA
DOI :
10.1109/MODSYM.1990.200989
