• DocumentCode
    3045866
  • Title

    Mosmatrix-a replacement for thyratrons

  • Author

    Vorster, A. ; Bredenkamp, G.

  • Author_Institution
    Syst. Lab., Rand Afrikaans Univ., Johannesburg, South Africa
  • fYear
    1990
  • fDate
    26-28 Jun 1990
  • Firstpage
    367
  • Lastpage
    370
  • Abstract
    A high-speed on-off switch using MOS devices has been developed. These devices are arranged in a matrix, `wide´ enough to handle the specified current and tall enough to block the maximum voltage. Switching times of less than 100 ns have been measured for a 200 A, 7.5 kV switch. Jitter was less than 2 ns. The peak current of 200 A exceeds the manufacturer´s specification by almost a factor of 3. It would thus be reasonable to expect rapid degradation of the devices. However, since the peak current specification may be exceeded by 300% in the parallel mode without any immediate adverse effects being evident, it is probably safe to operate the devices in parallel at 100% of the peak current limit. Derating the devices for parallel operation is probably unnecessary
  • Keywords
    driver circuits; field effect transistor circuits; insulated gate field effect transistors; power transistors; pulsed power technology; semiconductor switches; 200 A; 7.5 kV; MOS devices; degradation; high-speed on-off switch; jitter; maximum voltage; mosmatrix; peak current; Africa; Coupling circuits; Laboratories; MOS devices; MOSFETs; Pulse transformers; Switches; Thyratrons; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Modulator Symposium, 1990., IEEE Conference Record of the 1990 Nineteenth
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/MODSYM.1990.200993
  • Filename
    200993