DocumentCode :
3045866
Title :
Mosmatrix-a replacement for thyratrons
Author :
Vorster, A. ; Bredenkamp, G.
Author_Institution :
Syst. Lab., Rand Afrikaans Univ., Johannesburg, South Africa
fYear :
1990
fDate :
26-28 Jun 1990
Firstpage :
367
Lastpage :
370
Abstract :
A high-speed on-off switch using MOS devices has been developed. These devices are arranged in a matrix, `wide´ enough to handle the specified current and tall enough to block the maximum voltage. Switching times of less than 100 ns have been measured for a 200 A, 7.5 kV switch. Jitter was less than 2 ns. The peak current of 200 A exceeds the manufacturer´s specification by almost a factor of 3. It would thus be reasonable to expect rapid degradation of the devices. However, since the peak current specification may be exceeded by 300% in the parallel mode without any immediate adverse effects being evident, it is probably safe to operate the devices in parallel at 100% of the peak current limit. Derating the devices for parallel operation is probably unnecessary
Keywords :
driver circuits; field effect transistor circuits; insulated gate field effect transistors; power transistors; pulsed power technology; semiconductor switches; 200 A; 7.5 kV; MOS devices; degradation; high-speed on-off switch; jitter; maximum voltage; mosmatrix; peak current; Africa; Coupling circuits; Laboratories; MOS devices; MOSFETs; Pulse transformers; Switches; Thyratrons; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Modulator Symposium, 1990., IEEE Conference Record of the 1990 Nineteenth
Conference_Location :
San Diego, CA
Type :
conf
DOI :
10.1109/MODSYM.1990.200993
Filename :
200993
Link To Document :
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