DocumentCode
3045953
Title
High repetition rated semiconductor switch for excimer laser
Author
Okamura, K. ; Watanabe, Y. ; Yokokura, K. ; Ohshima, I.
Author_Institution
Toshiba Corp., Tokyo, Japan
fYear
1990
fDate
26-28 Jun 1990
Firstpage
407
Lastpage
410
Abstract
A high-repetition-rated semiconductor switch using IGBTs (insulated gate bipolar transistors) was designed and tested. The switch has a ten series and two parallel construction. The operation at 6 kV charging voltage, 2200 A peak discharge current, and 1 kpps repetition was confirmed. When it was adapted to an actual excimer laser circuit with a two-stage MPC (magnetic pulse compressor), the performance of the laser was almost equal to that of using a thyratron
Keywords
excimer lasers; insulated gate bipolar transistors; power transistors; semiconductor switches; 2200 A; 6 kV; IGBT; MPC; charging voltage; excimer laser; high-repetition-rated semiconductor switch; insulated gate bipolar transistors; magnetic pulse compressor; peak discharge current; Circuit testing; Insulated gate bipolar transistors; Magnetic circuits; Magnetic materials; Optical pulses; Photonic crystals; Semiconductor device testing; Semiconductor lasers; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Modulator Symposium, 1990., IEEE Conference Record of the 1990 Nineteenth
Conference_Location
San Diego, CA
Type
conf
DOI
10.1109/MODSYM.1990.200997
Filename
200997
Link To Document