Title :
Recovery of high field GaAs photoconductive semiconductor switches
Author :
Zutavern, F. ; Loubriel, G. ; O´Malley, M. ; Schanwald, L. ; McLaughlin, D.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
Abstract :
The authors discuss the recovery of GaAs PCSS (photoconductive semiconductor switches) after they are triggered into a high gain switching mode called lock-on. Fast recovery of GaAs switches after high field switching is of particular interest for high repetition rate applications where it is difficult to provide the large optical trigger energy required for switches operating at low fields. Three categories of circuits for inducing fast recovery after lock-on by temporarily reducing the field across the switch are examined. Measurements of recovery times from 35-80 ns, multiple monopolar and bipolar bursts at 5-40 MHz, and hold-off fields ranging from 5-44 kV/cm (corresponding to 15-66 kV across individual switches) are presented
Keywords :
III-V semiconductors; gallium arsenide; photoconducting devices; semiconductor switches; 15 to 66 kV; 5 to 40 MHz; GaAs photoconductive semiconductor switches; high field switching; high gain switching mode; lock-on; optical trigger energy; recovery; Gallium arsenide; Geometrical optics; Impedance; Laser mode locking; Optical switches; Photoconducting devices; Power semiconductor switches; Radiative recombination; Switching circuits; Voltage;
Conference_Titel :
Power Modulator Symposium, 1990., IEEE Conference Record of the 1990 Nineteenth
Conference_Location :
San Diego, CA
DOI :
10.1109/MODSYM.1990.201001
