Title :
Scalable modeling based on fill ratio for planar spiral inductors
Author :
Zhong, Lin ; Sun, Lingling ; Liu, Jun ; Wang, Huang
Author_Institution :
Key Lab. for RF Circuits & Syst. of Minist. of Educ., Hangzhou Dianzi Univ., Hangzhou, China
Abstract :
This paper presents a scalable model based on the fill ratio with an enhanced 1-π topology for on-chip spiral inductor. Usually, scalable modeling requires so many parameters such as the width, the turn spacing, number of turns and inner radius. To reduce the number of variables and coefficients in the scalable rules, this work utilizes fill ratio to represent geometry properties of an inductor and all the equations for the elements in the topology have simple form. The proposed scalable model is further verified by a set of spiral inductors fabricated by using 0.18-μm 1P6M RF CMOS technology.
Keywords :
CMOS integrated circuits; inductors; radiofrequency integrated circuits; 1P6M RF CMOS technology; enhanced 1-π topology; fill ratio scalable modeling; on-chip spiral inductor; planar spiral inductors; size 0.18 mum; Data mining; Data models; Equivalent circuits; Inductors; Integrated circuit modeling; Mathematical model; Spirals; enhanced 1-π; fill ratio; on-chip spiral inductor; scalable model;
Conference_Titel :
Integrated Circuits (ISIC), 2011 13th International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-61284-863-1
DOI :
10.1109/ISICir.2011.6131987
