Scalable modeling based on fill ratio for planar spiral inductors

Author

Zhong, Lin ; Sun, Lingling ; Liu, Jun ; Wang, Huang

Author_Institution

Key Lab. for RF Circuits & Syst. of Minist. of Educ., Hangzhou Dianzi Univ., Hangzhou, China

fYear

2011

fDate

12-14 Dec. 2011

Firstpage

424

Lastpage

427

Abstract

This paper presents a scalable model based on the fill ratio with an enhanced 1-π topology for on-chip spiral inductor. Usually, scalable modeling requires so many parameters such as the width, the turn spacing, number of turns and inner radius. To reduce the number of variables and coefficients in the scalable rules, this work utilizes fill ratio to represent geometry properties of an inductor and all the equations for the elements in the topology have simple form. The proposed scalable model is further verified by a set of spiral inductors fabricated by using 0.18-μm 1P6M RF CMOS technology.

Keywords

CMOS integrated circuits; inductors; radiofrequency integrated circuits; 1P6M RF CMOS technology; enhanced 1-π topology; fill ratio scalable modeling; on-chip spiral inductor; planar spiral inductors; size 0.18 mum; Data mining; Data models; Equivalent circuits; Inductors; Integrated circuit modeling; Mathematical model; Spirals; enhanced 1-π; fill ratio; on-chip spiral inductor; scalable model;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits (ISIC), 2011 13th International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-61284-863-1

Type

conf

DOI

10.1109/ISICir.2011.6131987

Filename

6131987