Analysis and optimization of tunnel FET with band gap engineering

Author

Salehi, Mohammad Reza ; Abiri, Ebrahim ; Hosseini, Seyed Ebrahim ; Dorostkar, B.

Author_Institution

Shiraz Univ. of Technol., Shiraz, Iran

fYear

2013

fDate

14-16 May 2013

Firstpage

1

Lastpage

4

Abstract

In this paper a high performance double gate tunnel field effect transistor (DG-TFET) is proposed. Band gap engineering is achieved in order to improve the device performance. This novel TFET is formed from variable band gap materials with 20 nm channel length to enhance on current and reach to low off-current. With precise selection of mole fraction in materials, Al_0.5Ga_0.6As and In_0.85Ga_0.15As are designated to all region in the device and important characterises of TFET are optimized. Low sub threshold swing below 60 mv/dec I_on/I_off ratio as high as 10¹² are the result of the simulation.

Keywords

III-V semiconductors; aluminium compounds; energy gap; field effect transistors; gallium arsenide; tunnel transistors; wide band gap semiconductors; Al_0.5Ga_0.6As; DG-TFET; In_0.85Ga_0.15As; band gap engineering; device performance improvement; high performance double gate tunnel field effect transistor; low sub threshold swing; mole fraction; size 20 nm; variable band gap materials; Field effect transistors; Logic gates; Materials; Performance evaluation; Photonic band gap; Tunneling; Double-gate; band-to-band tunneling; gated p-i-n diode; high-k dielectric; sub threshold swing; tunneling transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2013 21st Iranian Conference on

Conference_Location

Mashhad

Type

conf

DOI

10.1109/IranianCEE.2013.6599607

Filename

6599607