Title :
Analysis and optimization of tunnel FET with band gap engineering
Author :
Salehi, Mohammad Reza ; Abiri, Ebrahim ; Hosseini, Seyed Ebrahim ; Dorostkar, B.
Author_Institution :
Shiraz Univ. of Technol., Shiraz, Iran
Abstract :
In this paper a high performance double gate tunnel field effect transistor (DG-TFET) is proposed. Band gap engineering is achieved in order to improve the device performance. This novel TFET is formed from variable band gap materials with 20 nm channel length to enhance on current and reach to low off-current. With precise selection of mole fraction in materials, Al0.5Ga0.6As and In0.85Ga0.15As are designated to all region in the device and important characterises of TFET are optimized. Low sub threshold swing below 60 mv/dec Ion/Ioff ratio as high as 1012 are the result of the simulation.
Keywords :
III-V semiconductors; aluminium compounds; energy gap; field effect transistors; gallium arsenide; tunnel transistors; wide band gap semiconductors; Al0.5Ga0.6As; DG-TFET; In0.85Ga0.15As; band gap engineering; device performance improvement; high performance double gate tunnel field effect transistor; low sub threshold swing; mole fraction; size 20 nm; variable band gap materials; Field effect transistors; Logic gates; Materials; Performance evaluation; Photonic band gap; Tunneling; Double-gate; band-to-band tunneling; gated p-i-n diode; high-k dielectric; sub threshold swing; tunneling transistor;
Conference_Titel :
Electrical Engineering (ICEE), 2013 21st Iranian Conference on
Conference_Location :
Mashhad
DOI :
10.1109/IranianCEE.2013.6599607
