DocumentCode
3046186
Title
Performance Enhancement by Substrate Perforation for a Wafer-Level Encapsulated RF MEMS DC Shunt Switch
Author
Ke, Feixiang ; Miao, Jianmin ; Tan, Chee Wee
Author_Institution
Nanyang Technol. Univ., Singapore
fYear
2009
fDate
25-29 Jan. 2009
Firstpage
876
Lastpage
879
Abstract
A wafer-level encapsulated RF MEMS shunt switch with perforated base substrate and corrugated diaphragm was developed. For the first time, the perforated base substrate by meticulous design is introduced to tremendously reduce squeeze-film damping and thus significantly increase the switching speed. The characterization of the fabricated and wafer-level encapsulated switch in terms of the switching time and RF performance is presented in this paper as well.
Keywords
damping; microswitches; RF MEMS DC shunt switch; corrugated diaphragm; performance enhancement; squeeze-film damping; substrate perforation; wafer-level encapsulated switch; Bridge circuits; Contacts; Coplanar waveguides; Damping; Encapsulation; Microswitches; Radiofrequency microelectromechanical systems; Residual stresses; Silicon; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on
Conference_Location
Sorrento
ISSN
1084-6999
Print_ISBN
978-1-4244-2977-6
Electronic_ISBN
1084-6999
Type
conf
DOI
10.1109/MEMSYS.2009.4805523
Filename
4805523
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