Title :
A Stress-Tolerant Temperature-Stable RF MEMS Switched Capacitor
Author :
Reines, I. ; Pillans, B. ; Rebeiz, G.M.
Author_Institution :
Univ. of California San Diego, La Jolla, CA
Abstract :
We present the design, fabrication, and measurement of an RF MEMS (radio frequency micro-electromechanical system) switched capacitor that exhibits reduced sensitivity to residual stress and temperature. The device is based on a circularly symmetric geometry with arc-type springs placed between the anchors and suspended beam. This design compensates for the effects of the residual biaxial stress in the beam, resulting in a pull-in voltage slope versus temperature of only -50 mV/degC from -5degC to 95degC. Reducing the device sensitivity to residual stress improves the performance uniformity on a wafer-scale, and from wafer-to-wafer lots.
Keywords :
capacitors; internal stresses; microswitches; device sensitivity; pull-in voltage slope; residual stress; stress-tolerant temperature-stable RF MEMS switched capacitor; switched capacitor; temperature -5 degC to 95 degC; wafer-to-wafer lots; Capacitors; Fabrication; Frequency measurement; Geometry; Radiofrequency microelectromechanical systems; Residual stresses; Springs; Stress measurement; Temperature sensors; Voltage;
Conference_Titel :
Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-2977-6
Electronic_ISBN :
1084-6999
DOI :
10.1109/MEMSYS.2009.4805524
