DocumentCode :
3046263
Title :
Post-Fabrication Electrical Trimming of Silicon Bulk Acoustic Resonators using Joule Heating
Author :
Samarao, A.K. ; Ayazi, F.
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA
fYear :
2009
fDate :
25-29 Jan. 2009
Firstpage :
892
Lastpage :
895
Abstract :
This paper presents a new method to electrically trim the resonance frequency of a Silicon Bulk Acoustic Resonator (SiBAR) post fabrication. Width-extensional mode silicon resonators are heated by passing a current through their resonating elements. This causes a mass loading gold pattern to diffuse into the bulk of the resonator. Upon cooling, the gold diffusion increases the stiffness of the resonating structure slightly, which reflects as an upward shift in resonance frequency. Thus, silicon resonators can be permanently trimmed to a desired frequency value by an electrical calibration step. As a proof of concept, an upward frequency shift of 240 kHz is demonstrated for a 40% mass loaded 100 MHz SiBAR after one hour of Joule heating with 30 mA of DC current.
Keywords :
acoustic resonators; bulk acoustic wave devices; cooling; diffusion; elemental semiconductors; micromechanical resonators; silicon; Joule heating; cooling; current 30 mA; diffusion; electrical calibration; electrical trimming; frequency 100 MHz; resonance frequency; resonating elements; silicon bulk acoustic resonator; stiffness; time 1 hour; upward frequency shift; Degradation; Electric resistance; Electrodes; Etching; Frequency; Protection; Q factor; Resistance heating; Silicon compounds; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on
Conference_Location :
Sorrento
ISSN :
1084-6999
Print_ISBN :
978-1-4244-2977-6
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2009.4805527
Filename :
4805527
Link To Document :
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