DocumentCode :
3046426
Title :
Fully Differential Internal Electrostatic Transduction of a Lamé-Mode Resonator
Author :
Ziaei-Moayyed, M. ; Elata, D. ; Hsieh, J. ; Chen, J.-W.P. ; Quevy, E.P. ; Howe, R.T.
Author_Institution :
Stanford Univ., Stanford, CA
fYear :
2009
fDate :
25-29 Jan. 2009
Firstpage :
931
Lastpage :
934
Abstract :
This paper reports the parallel internal electrostatic transduction of a laterally driven Lame-mode polysilicon resonator. This resonator is fabricated using a manufacturable double nanogap process that provides ultrathin high-aspect ratio lateral gaps. The transduction electrodes are optimally placed and oriented to maximize electromechanical transduction efficiency for the fundamental Lame mode. A 128.15 MHz Lame-mode resonator is driven and sensed differentially with a 20 V DC polarization voltage: the motional resistance is about 30 kOmega and the quality factor Q > 12000 in air.
Keywords :
electrostatic devices; micromechanical resonators; Lame-mode resonator; fully differential internal electrostatic transduction; polysilicon resonator; Compressive stress; Dielectrics; Electrodes; Electrostatic measurements; Impedance; Internal stresses; Micromechanical devices; Q factor; Resonance; Resonant frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on
Conference_Location :
Sorrento
ISSN :
1084-6999
Print_ISBN :
978-1-4244-2977-6
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2009.4805537
Filename :
4805537
Link To Document :
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