Low frequency noise investigation of AlGaN/GaNOn silicon Schottky diode

Author

Li, Yihu ; Xiong, Yong-Zhong ; Arulkumaran, S. ; Wang, Lei ; Goh, Wang Ling ; Ng, Geok Ing ; Todd, Shane ; Lo, Patrick

Author_Institution

Nanyang Technol. Univ., Singapore, Singapore

fYear

2011

fDate

12-14 Dec. 2011

Firstpage

524

Lastpage

527

Abstract

This paper presents the low frequency noise investigation of the AlGaN/GaN on silicon Schottky diode. The noise power spectral density of various sizes of the AlGaN/GaN Schottky diodes under different biasing voltages has been measured. The 1/f behaviour is observed before the corner frequency and the effect of the multi-finger contact is also been determined. With increasing number of fingers, higher 1/f noise is observed. However, if the frequency is increased further, the noise power density is noted to decay more rapidly. This therefore implies that a low thermal noise floor has been achieved.

Keywords

1/f noise; III-V semiconductors; Schottky diodes; aluminium compounds; gallium compounds; semiconductor device noise; silicon; wide band gap semiconductors; 1/f noise; AlGaN-GaN; low frequency noise; low thermal noise floor; multifinger contact; noise power spectral density; silicon Schottky diode; Floors; Gallium nitride; Low-frequency noise; Schottky diodes; Silicon; Thermal noise; 1/f noise; Schottky diode; corner frequency; power spectral density; thermal noise floor;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits (ISIC), 2011 13th International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-61284-863-1

Type

conf

DOI

10.1109/ISICir.2011.6132012

Filename

6132012