Surface barrier 4H-SiC soft X-ray detecor for hot plasmas diagnostic

Author

Dubecky, F. ; Gombia, E. ; Vanko, G. ; Ferrari, Carlo ; Zat´ko, B. ; Kovac, Pavol ; Bacek, D. ; Baldini, M. ; Ryc, L. ; Necas, V.

Author_Institution

Inst. of Electr. Eng., Bratislava, Slovakia

fYear

2012

fDate

11-15 Nov. 2012

Firstpage

247

Lastpage

250

Abstract

The work reports on the characterization of high purity epitaxial 4H-SiC grown by liquid phase epitaxy and the performances of Au-Ni/4H-SiC detectors fabricated on the same material. X-ray diffraction and topography as well as I-V, C-V and DLTS measurements are used for the evaluation of the material properties and device characteristics. The X-ray detection abilities are evaluated by pulse-height spectra measurements of the ²⁴¹Am. Preliminary results of the detector hardness to fast neutron and gamma ray radiations are also reported.

Keywords

X-ray detection; X-ray diffraction; X-ray topography; deep level transient spectroscopy; gold; hardness; liquid phase epitaxial growth; nickel; plasma diagnostics; semiconductor counters; semiconductor growth; silicon compounds; wide band gap semiconductors; Au-Ni-SiC; C-V measurements; DLTS measurements; I-V measurements; X-ray detection; X-ray diffraction; detector hardness; fast neutron radiations; gamma ray radiations; high purity epitaxial 4H-SiC growth; hot plasma diagnostic; liquid phase epitaxy; pulse-height spectra measurements; surface barrier 4H-SiC soft X-ray detector; Detectors; Neutrons; Noise; Schottky barriers; Semiconductor device measurement; Silicon carbide; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4673-1197-7

Type

conf

DOI

10.1109/ASDAM.2012.6418521

Filename

6418521