Title :
Tunnel junction technology for multijunction solar cell applications
Author :
Sciana, B. ; Zborowska-Lindert, I. ; Radziewicz, D. ; Pucicki, D. ; Panek, M. ; Jurenczyk, J. ; Dawidowski, W. ; Badura, M. ; Tlaczala, M.
Author_Institution :
Div. of Microelectron. & Nanotechnol., Wroclaw Univ. of Technol., Wroclaw, Poland
Abstract :
Solar cells are very promising renewable resource. High efficiency of AIIIBV based solar cells are achieved in multijunction constructions. The technology of these devices is very difficult due to the complex electrical and optical interactions between the different semiconductor layers. Usually, the individual subcells are interconnected via Esaki tunnel diodes. This work presents the technology and computer modelling of GaAs based tunnel diodes which will be applied in tandem GaAs/InGaAs solar cells. Designed structures were grown by atmospheric pressure metal organic vapour phase epitaxy. Simulation results as well as dopant profiles and measured DC I-U characteristics of the obtained tunnel diodes are presented and discussed.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; semiconductor growth; solar cells; tunnel diodes; vapour phase epitaxial growth; AIIIBV based solar cells; DC I-U characteristics; Esaki tunnel diodes; GaAs-InGaAs; atmospheric pressure metal organic vapour phase epitaxy; computer modelling; dopant solar profiles; electrical interactions; multijunction constructions; multijunction solar cell applications; optical interactions; renewable resource; semiconductor layers; tandem solar cells; tunnel junction technology; Epitaxial growth; Gallium arsenide; Junctions; Photovoltaic cells; Semiconductor diodes; Semiconductor process modeling; Tunneling;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418522
