Electrical characterization of GaSb buried p-n junctions

Author

Baldini, M. ; Gombia, E. ; Parisini, A. ; Tarricone, Luciano ; Ghezzi, Carlo ; Frigeri, C. ; Gasparotto, A.

Author_Institution

IMEM, Parma, Italy

fYear

2012

fDate

11-15 Nov. 2012

Firstpage

239

Lastpage

242

Abstract

Buried GaSb junctions were realized through Zn diffusion in Te-doped GaSb bulk crystals, the p-dopant being supplied through the epitaxial deposition of a heavily Zn-doped GaAs layer on GaSb. Structural and electrical investigations confirm the build-up of buried junctions, induced by Zn diffusion within GaSb, with satisfying rectifying properties. Surprisingly, the p-n junctions are formed more deeply with respect to the Zn diffusion front. A local rising up of the native acceptor density is assumed to drive the p-type conductivity conversion of the GaSb substrate beyond the Zn penetration depth.

Keywords

III-V semiconductors; MOCVD; diffusion; electrical conductivity; gallium arsenide; gallium compounds; p-n heterojunctions; rectification; semiconductor growth; vapour phase epitaxial growth; zinc; GaSb-GaAs:Zn; GaSb:Te; bulk crystals; buried p-n junctions; diffusion front; electrical characterization; epitaxial deposition; local rising up; native acceptor density; p-dopant; p-type conductivity conversion; penetration depth; structural investigations; Capacitance-voltage characteristics; Doping; Gallium arsenide; P-n junctions; Substrates; Temperature measurement; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4673-1197-7

Type

conf

DOI

10.1109/ASDAM.2012.6418523

Filename

6418523