DocumentCode
3046996
Title
Strain accommodation within porous buffer layers in heteroepitaxial growth
Author
Grym, J. ; Nohavica, D. ; Gladkov, P. ; Vanis, J. ; Hulicius, E. ; Pangrac, J. ; Pacherova, O. ; Piksova, K.
Author_Institution
Inst. of Photonics & Electron., Prague, Czech Republic
fYear
2012
fDate
11-15 Nov. 2012
Firstpage
235
Lastpage
238
Abstract
We report on the electrochemical preparation of GaAs porous substrates, their heat treatment in As rich environment and their overgrowth by metalorganic vapor phase epitaxy (MOVPE). The goal is to demonstrate that porous substrates are capable of accommodating strain at the interface with highly lattice mismatched In(x)Ga(1-x)As layers.
Keywords
III-V semiconductors; MOCVD; buffer layers; electrochemical analysis; gallium arsenide; heat treatment; indium compounds; porous materials; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; GaAs; GaAs-InGaAs; MOVPE; electrochemical preparation; heat treatment; heteroepitaxial growth; lattice mismatched layers; metalorganic vapor phase epitaxy; porous buffer layers; porous substrates; strain accommodation; Epitaxial growth; Epitaxial layers; Gallium arsenide; Scanning electron microscopy; Substrates; Surface morphology; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location
Smolenice
Print_ISBN
978-1-4673-1197-7
Type
conf
DOI
10.1109/ASDAM.2012.6418524
Filename
6418524
Link To Document