Title :
The impact of changed barrier layer parameters upon tunnelling in GaN/AlGaN/GaN Schottky structures
Author :
Racko, J. ; Mikolasek, M. ; Granzner, Ralf ; Al Mustafa, N. ; Schwierz, Frank ; Breza, J.
Author_Institution :
Slovak Univ. of Technol., Bratislava, Slovakia
Abstract :
We have designed and applied a new trap-assisted-tunnelling model to simulate GaN/AlGaN/GaN Schottky structures. The influence was investigated of a varied cap thickness on the overall current flow. It is shown that large currents experimentally observed in such a reverse biased Schottky structure have a tunnelling nature and can be described by our new model.
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; gallium compounds; tunnelling; wide band gap semiconductors; GaN-AlGaN-GaN; GaN-AlGaN-GaN Schottky structures; cap thickness; changed barrier layer parameter impact; current flow; reverse biased Schottky structure; trap-assisted-tunnelling model; Aluminum gallium nitride; Electron traps; Gallium nitride; Mathematical model; Radiative recombination; Tunneling;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418531
