DocumentCode :
3047300
Title :
Resist Science and Kinetics
Author :
Tagawa, Seiichi
Author_Institution :
Osaka Univ., Osaka
fYear :
2007
fDate :
5-8 Nov. 2007
Firstpage :
8
Lastpage :
8
Abstract :
Significant advances are continually being made in semiconductor device fabrication, especially in lithography. A key step in the lithography involves the definition of a circuit pattern into a resist. The economical operation of semiconductor device fabrication demands extremely high resist sensitivity. For the achievement of high sensitivity, the concept of chemical amplification is an indispensable technology. Nowadays the trade-off between sensitivity, resolution, and line edge roughness is the most serious concern for the development of high performance resists based on chemical amplification. In the present paper, we reconsider the history of the resist development and discuss the critical points and the new design of high permeance resist materials and processes from the viewpoint of resist science and kinetics such as the trade-off and non-trade-off factors and the limitation of chemically amplified resists.
Keywords :
lithography; reaction kinetics; resists; chemical amplification; circuit pattern; kinetics; lithography; resist science; semiconductor device fabrication; Chemical processes; Chemical technology; Circuits; Fabrication; History; Kinetic theory; Lithography; Resists; Semiconductor devices; Textile industry;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
Type :
conf
DOI :
10.1109/IMNC.2007.4456078
Filename :
4456078
Link To Document :
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