Title :
Electrical properties of 2,6-bis(5′-hexyl-2,2′-bithiophene-5-yl) naphthalene organic transistors: Effect of preparation conditions
Author :
Weis, M. ; Jakabovic, J. ; Donoval, Daniel ; Filo, J. ; Putala, M.
Author_Institution :
Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia
Abstract :
Organic field-effect transistors (OFETs) based on solution-processable organic semiconductors have experienced wide range of applications. Here we report fabrication, structure, and electrical properties of 2,6-bis(5´-hexyl-2,2´-bithiophen-5-yl)naphthalene (H2T26N) OFETs. The high-temperature tilt-casting has been used for preparation of giant grains up to 300 μm. Film structure as well as effective mobilities has been found dependent on fabrication temperature, while the threshold voltage was conserved. Electrical properties are discussed accordance to the film structure and compared with other common solution-processable organic semiconductors.
Keywords :
casting; organic field effect transistors; organic semiconductors; 2,6-bis(5´-hexyl-2,2´-bithiophene-5-yl) naphthalene organic transistors; OFET; effective mobilities; electrical properties; film structure; giant grain preparation; high-temperature tilt casting; organic field effect transistors; preparation conditions; solution-processable organic semiconductors; threshold voltage; Fabrication; Films; OFETs; Organic semiconductors; Temperature; Threshold voltage;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418542
