The influence of an AlOx film in-situ deposited on the GaAs-based HFETs properties

Author

Gregusova, D. ; Kudela, R. ; Stoklas, R. ; Blaho, M. ; Gucmann, F. ; Fedor, J. ; Kordos, P.

Author_Institution

Inst. of Electr. Eng., Bratislava, Slovakia

fYear

2012

fDate

11-15 Nov. 2012

Firstpage

107

Lastpage

110

Abstract

An in-situ deposited AlO_x layer has a great influence on the transistor properties. We recently published a comparison between an AlGaAs/InGaAs/GaAs HFET (without any passivation) and a passivated MOSHFET (AlO_x/AlGaAs/InGaAs/GaAs. This paper reports on properties of AlGaAs/GaAs transistors with an InGaAs channel passivated with an in-situ deposited AlO_x layer. Also, the effectiveness of the passivation is discussed. The influence of an thin AlO_x layer on properties of passivated HFET in comparison to the passivated MOSHFET and the unpassivated HFET was studied. The understanding of the functionality of the in-situ deposited layer in the passivation or modification of surface trapping states will contribute to the knowledge of GaAs surface potential control.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; passivation; surface potential; surface states; thin films; AlGaAs-GaAs transistor properties; AlGaAs-InGaAs-GaAs; AlGaAs-InGaAs-GaAs HFET; AlO_x; GaAs surface potential control; GaAs-based HFET properties; InGaAs channel; deposited layer functionality; passivated HFET properties; passivated MOSHFET; passivation effectiveness; surface trapping state modification; thin layer; unpassivated HFET; Gallium arsenide; HEMTs; Indium gallium arsenide; Logic gates; MODFETs; Nitrogen; Oxidation;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4673-1197-7

Type

conf

DOI

10.1109/ASDAM.2012.6418545

Filename

6418545